Electronics & Communication Gate Yearwise 

Electronics and Communication Gate 2019 Questions with Answer

Ques 27 GATE 2019

In the circuit shown, Vs is a 10 V square wave of period, T=4 ms with R=500 Ω and C=10 μF. The capacitor is initially uncharged at t=0, and the diode is assumed to be ideal. The voltage across the capacitor (Vc) at 3 ms is equal to... volts (rounded off to one decimal place).


(3.3) is the correct answer.

Ques 28 GATE 2019

Which one of the following options describes correctly the equilibrium band diagram at T=300 K of a Silicon pmn+p++ configuration shown in the figure?

A

Refer to figure (A)

B

Refer to figure (B)

C

Refer to figure (C)

D

Refer to figure (D)


(a) is the correct answer.

Ques 29 GATE 2019

The correct circuit representation of the structure shown in the figure is

A

Refer to figure (A)

B

Refer to figure (B)

C

Refer to figure (C)

D

Refer to figure (D)


(a) is the correct answer.

Ques 30 GATE 2019

The figure shows the high-frequency C-V curve of a MOS capacitor (at T=300 K) with Φms=0 V and no oxide charges. The flat-band, inversion, and accumulation conditions are represented, respectively, by the points

A

P, Q, R

B

Q, R, P

C

R, P, Q

D

Q. P, R


(b) is the correct answer.

Ques 31 GATE 2019

The quantum efficiency (η) and responsivity (R) at a wavelength λ(in μm) in a p-i-n photodetector are related by

A

R=(η×λ)/1.24

B

R=λ/(η×1.24)

C

R=(1.24×λ)/η

D

R=1.24/(η×λ)


(a) is the correct answer.

Ques 32 GATE 2019

A Germanium sample of dimensions 1 cm × 1 cm is illuminated with a 20 mW, 600 nm laser light source as shown in the figure. The illuminated sample surface has a 100 nm of loss-less Silicon dioxide layer that reflects one-fourth of the incident light. From the remaining light, one-third of the power is reflected from the Silicon dioxide-Germanium interface, one-third is absorbed in the Germanium layer, and one-third is transmitted through the other side of the sample. If the absorption coefficient of Germanium at 600 nm is 3×104 cm-1 and the bandgap is 0.66 eV, the thickness of the Germanium layer, rounded off to 3 decimal places, is... μm.


(0.231) is the correct answer.

Ques 33 GATE 2019

Consider a long-channel MOSFET with a channel length 1 μm and width 10μm. The device parameters are acceptor concentration NA=5×1016 cm-3, electron mobility μn=800 cm2/V-s, oxide capacitance/area Cox=3.45×10-7 F/cm2, threshold voltage VT=0.7 V. The drain saturation current (IDsat) for a gate voltage of 5 V is... mA (rounded off to two decimal places). [ε0=8.854×10-14 F/cm, εSi=11.9]


(25.5) is the correct answer.

Ques 34 GATE 2019

In an ideal pn junction with an ideality factor of 1 at T=300 K, the magnitude of the reverse-bias voltage required to reach 75% of its reverse saturation current, rounded off to 2 decimal places, is... mV. [k=1.38×10-23 J/K, h=6.625×10-34 J-s, q=1.602×10-19 C]


(35.9) is the correct answer.

Ques 35 GATE 2019

Which one of the following functions is analytic over the entire complex plane?

A

ln(z)

B

e1/z

C

1/(1-z)

D

cos(z)


(d) is the correct answer.

Ques 36 GATE 2019

The families of curves represented by the solution of the equation dy/dx = -(x/y)n for n=-1 and n=+1, respectively, are

A

Parabolas and Circles

B

Circles and Hyperbolas

C

Hyperbolas and Circles

D

Hyperbolas and Parabolas


(c) is the correct answer.

Ques 37 GATE 2019

The value of the contour integral
(1/2πj)∮ (z+1/z)2dz
evaluated over the unit circle |z|=1 is


(0) is the correct answer.

Ques 38 GATE 2019

The number of distinct eigenvalues of the matrix

is equal to


(3) is the correct answer.

Ques 39 GATE 2019

If X and Y are random variables such that E[2X+Y]=0 and E[X+2Y]=3, then E[X]+E[Y]=


(1) is the correct answer.

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