Electronics and Communication Gate 2015 Set-3 Questions with Answer

Ques 27 GATE 2015 SET-3


Consider the 3 m long lossless air-filled transmission line shown in the figure. It has a characteristic impedance of 120π Ω, is terminated by a short circuit, and is excited with a frequency of 37.5 MHz. What is the nature of the input impedance (Zin)?

A

Open

B

Short

C

Inductive

D

Capacitive


(c) is the correct answer.

Ques 28 GATE 2015 SET-3


A 200 m long transmission line having parameters shown in the figure is terminated into a load RL. The line is connected to a 400 V source having source resistance RS through a switch, which is closed at t=0. The transient response of the circuit at the input of the line (z=0) is also drawn in the figure. The value of RL (in Ω) is __________.


(30) is the correct answer.

Ques 29 GATE 2015 SET-3


A coaxial capacitor of inner radius 1 mm and outer radius 5 mm has a capacitance per unit length of 172 pF/m. If the ratio of outer radius to inner radius is doubled, the capacitance per unit length (in pF/m) is __________.


(120.2) is the correct answer.

Ques 30 GATE 2015 SET-3


Which one of the following processes is preferred to form the gate dielectric (SiO2) of MOSFETs?

A

Sputtering

B

Molecular beam epitaxy

C

Wet oxidation

D

Dry oxidation


(d) is the correct answer.

Ques 31 GATE 2015 SET-3


If the base width in a bipolar junction transistor is doubled, which one of the following statements will be TRUE?

A

Current gain will increase.

B

Unity gain frequency will increase.

C

Emitter-base junction capacitance will increase.

D

Early Voltage will increase.


(d) is the correct answer.

Ques 32 GATE 2015 SET-3


The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is NOT TRUE?

A

The left side of the junction is n-type and the right side is p-type

B

Both the n-type and p-type depletion regions are uniformly doped

C

The potential difference across the depletion region is 700 mV

D

If the p-type region has a doping concentration of 1015 cm-3, then the doping concentration in the n-type region will be 1016 cm-3


(c) is the correct answer.

Ques 33 GATE 2015 SET-3


The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased to 6 V while keeping gate-source voltage same, the drain current increased to 1.02 mA. Assume that drain to source saturation voltage is much smaller than the applied drain-source voltage. The channel length modulation parameter λ (in V-1) is __________.


(0.02) is the correct answer.

Ques 34 GATE 2015 SET-3


An npn BJT having reverse saturation current IS = 10-15 A is biased in the forward active region with VBE = 700 mV. The thermal voltage (VT) is 25 mV and the current gain (β) may vary from 50 to 150 due to manufacturing variations. The maximum emitter current (in μA) is __________.


(1475) is the correct answer.

Ques 35 GATE 2015 SET-3


For the determinant of ATA-1 is

A

sec2x

B

cos 4x

C

1

D

0


(c) is the correct answer.

Ques 36 GATE 2015 SET-3


The contour on the x-y plane, where the partial derivative of x2+y2 with respect to y is equal to the partial derivative of 6y+4x with respect to x, is

A

y = 2

B

x = 2

C

x + y = 4

D

x - y = 0


(a) is the correct answer.

Ques 37 GATE 2015 SET-3


If C is a circle of radius r with centre z0, in the complex z-plane and if n is a non-zero integer, then ∮C dz/(z-z0)n+1 equals

A

2πnj

B

0

C

nj/2π

D

2πn


(b) is the correct answer.

Ques 38 GATE 2015 SET-3


The value of ∑n=0 n(1/2)n is __________.


(2) is the correct answer.

Ques 39 GATE 2015 SET-3


The Newton-Raphson method is used to solve the equation f(x) = x3 - 5x2 + 6x - 8 = 0. Taking the initial guess as x = 5, the solution obtained at the end of the first iteration is __________.


(4.3) is the correct answer.

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