Electronics & Communication Gate Yearwise
Electronics and Communication Gate 2014 Set-3 Questions with Answer
Ques 27 GATE 2014 SET-3
A region shown below contains a perfect conducting half-space and air. The surface current Ks on the surface of the perfect conductor is Ks = x̂2 amperes per meter. The tangential H field in the air just above the perfect conductor is
Ques 28 GATE 2014 SET-3
Assume that a plane wave in air with an electric field E(t) = ây10 cos(ωt − 3x − √3z) V/m is incident on a non-magnetic dielectric slab of relative permittivity 3 which covers the region z > 0. The angle of transmission in the dielectric slab is ________ degrees.
Ques 29 GATE 2014 SET-3
In MOSFET fabrication, the channel length is defined during the process of
Ques 30 GATE 2014 SET-3
A thin P-type silicon sample is uniformly illuminated with light which generates excess carriers. The recombination rate is directly proportional to
Ques 31 GATE 2014 SET-3
At T = 300 K, the hole mobility of a semiconductor μp = 500 cm2/V-s and kT/q = 26 mV. The hole diffusion constant Dp in cm2/s is ________
Ques 32 GATE 2014 SET-3
The donor and accepter impurities in an abrupt junction silicon diode are 1 × 1016 cm−3 and 5 × 1018 cm−3, respectively. Assume that the intrinsic carrier concentration in silicon ni = 1.5 × 1010 cm−3 at 300 K, kT/q = 26 mV and the permittivity of silicon εsi = 1.04 × 10−12 F/cm. The built-in potential and the depletion width of the diode under thermal equilibrium conditions, respectively, are
Ques 33 GATE 2014 SET-3
The slope of the ID vs. VGS curve of an n-channel MOSFET in linear regime is 10−3 Ω−1 at VDS = 0.1 V. For the same device, neglecting channel length modulation, the slope of the √ID vs. VGS curve (in √A/V) under saturation regime is approximately _________.
Ques 34 GATE 2014 SET-3
An ideal MOS capacitor has boron doping-concentration of 1015 cm−3 in the substrate. When a gate voltage is applied, a depletion region of width 0.5 μm is formed with a surface (channel) potential of 0.2 V. Given that ε0 = 8.854 × 10−14 F/cm and the relative permittivities of silicon and silicon dioxide are 12 and 4, respectively, the peak electric field (in V/μm) in the oxide region is _____________.
Ques 35 GATE 2014 SET-3
The maximum value of the function f(x) = ln(1 + x) − x (where x > −1) occurs at x = ______.
Ques 36 GATE 2014 SET-3
Which ONE of the following is a linear non-homogeneous differential equation, where x and y are the independent and dependent variables respectively?
Ques 37 GATE 2014 SET-3
Match the application to appropriate numerical method.
P1: Numerical integration → M1: Newton-Raphson Method
P2: Solution to a transcendental equation → M2: Runge-Kutta Method
P3: Solution to a system of linear equations → M3: Simpson's 1/3-rule
P4: Solution to a differential equation → M4: Gauss Elimination Method
Ques 38 GATE 2014 SET-3
An unbiased coin is tossed an infinite number of times. The probability that the fourth head appears at the tenth toss is
Ques 39 GATE 2014 SET-3
If z = ln(xy), then
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