Electronics and Communication Gate 2014 Set-2 Questions with Answer

Ques 27 GATE 2014 SET-2

Which one of the following field patterns represents a TEM wave travelling in the positive x direction?

Ques 28 GATE 2014 SET-2

When a silicon diode having a doping concentration of N_A = 9 × 10¹⁶ cm^-3 on p-side and N_D = 1 × 10¹⁶ cm^-3 on n-side is reverse biased, the total depletion width is found to be 3 μm. Given that the permittivity of silicon is 1.04 × 10^-12 F/cm, the depletion width on the p-side and the maximum electric field in the depletion region, respectively, are

Ques 29 GATE 2014 SET-2

For the n-channel MOS transistor shown in the figure, the threshold voltage V_Th is 0.8 V. Neglect channel length modulation effects. When the drain voltage V_D = 1.6 V, the drain current I_D was found to be 0.5 mA. If V_D is adjusted to be 2 V by changing the values of R and V_DD, the new value of I_D (in mA) is

Ques 30 GATE 2014 SET-2

For the MOSFETs shown in the figure, the threshold voltage |V_t| = 2 V and (1/2)μC_ox(W/L) = 0.1 mA/V². The value of I_D (in mA) is _______ .

Ques 31 GATE 2014 SET-2

A silicon bar is doped with donor impurities N_D = 2.25 x 10¹⁵ atoms / cm³. Given the intrinsic carrier concentration of silicon at T = 300 K is n_i = 1.5 x 10¹⁰ cm^-3. Assuming complete impurity ionization, the equilibrium electron and hole concentrations are

Ques 32 GATE 2014 SET-2

An increase in the base recombination of a BJT will increase

Ques 33 GATE 2014 SET-2

In CMOS technology, shallow P-well or N-well regions can be formed using

Ques 34 GATE 2014 SET-2

Assume electronic charge q = 1.6×10^-19 C, kT/q = 25 mV and electron mobility μ_n = 1000 cm²/V-s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×10²¹/cm⁴, the magnitude of electron diffusion current density (in A/cm²) is _________.

Ques 35 GATE 2014 SET-2

Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width X_n on the N-side of the junction is 0.2 μm and the permittivity of silicon (ε_si) is 1.044×10^-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm) is _________.

Ques 36 GATE 2014 SET-2

The determinant of matrix A is 5 and the determinant of matrix B is 40. The determinant of matrix AB is ________.

Ques 37 GATE 2014 SET-2

Let X be a random variable which is uniformly chosen from the set of positive odd numbers less than 100. The expectation, E[X], is __________.

Ques 38 GATE 2014 SET-2

For 0 ≤ t < ∞, the maximum value of the function f(t) = e^-t - 2 e^-2t occurs at

Ques 39 GATE 2014 SET-2

The value of lim_x→∞ (1 + 1/x)^x is