Electronics & Communication Gate Yearwise 

Electronics and Communication Gate 2014 Set-1 Questions with Answer

Ques 27 GATE 2014 SET-1

When the optical power incident on a photodiode is 10μW and the responsivity is 0.8 A/W, the photocurrent generated (in μA) is ________.


(8) is the correct answer.

Ques 28 GATE 2014 SET-1

In the figure, assume that the forward voltage drops of the PN diode D1 and Schottky diode D2 are 0.7 V and 0.3 V, respectively. If ON denotes conducting state of the diode and OFF denotes non-conducting state of the diode, then in the circuit,

A

both D1 and D2 are ON

B

D1 is ON and D2 is OFF

C

both D1 and D2 are OFF

D

D1 is OFF and D2 is ON


(d1 is off and d2 is on) is the correct answer.

Ques 29 GATE 2014 SET-1

If fixed positive charges are present in the gate oxide of an n-channel enhancement type MOSFET, it will lead to

A

a decrease in the threshold voltage

B

channel length modulation

C

an increase in substrate leakage current

D

an increase in accumulation capacitance


(a) is the correct answer.

Ques 30 GATE 2014 SET-1

A BJT is biased in forward active mode. Assume VBE = 0.7 V, kT/q = 25 mV and reverse saturation current IS = 10-13 A. The transconductance of the BJT (in mA/V) is __________.


(5.8) is the correct answer.

Ques 31 GATE 2014 SET-1

The doping concentrations on the p-side and n-side of a silicon diode are 1 × 1016 cm-3 and 1 × 1017 cm-3, respectively. A forward bias of 0.3 V is applied to the diode. At T = 300 K, the intrinsic carrier concentration of silicon ni = 1.5 × 1010 cm-3 and kT/q = 26 mV. The electron concentration at the edge of the depletion region on the p-side is

A

2.3 × 109 cm-3

B

1 × 1016 cm-3

C

1 × 1017 cm-3

D

2.25 × 106 cm-3


(a) is the correct answer.

Ques 32 GATE 2014 SET-1

A depletion type N-channel MOSFET is biased in its linear region for use as a voltage controlled resistor. Assume threshold voltage VTH = -0.5 V, VGS = 2.0 V, VDS = 5 V, W/L = 100, Cox = 10-8 F/cm2 and μn = 800 cm2/V-s. The value of the resistance of the voltage controlled resistor (in Ω) is __________.


(500) is the correct answer.

Ques 33 GATE 2014 SET-1

For matrices of same dimension M, N and scalar c, which one of these properties DOES NOT ALWAYS hold?

A

(MT)T = M

B

(cM)T = c(M)T

C

(M + N)T = MT + NT

D

MN = NM


(d) is the correct answer.

Ques 34 GATE 2014 SET-1

In a housing society, half of the families have a single child per family, while the remaining half have two children per family. The probability that a child picked at random, has a sibling is _____


(0.67) is the correct answer.

Ques 35 GATE 2014 SET-1

C is a closed path in the z-plane given by |z| = 3. The value of the integral ∮C [(z2-z+4j)/(z+2j)] dz is

A

-4π(1 + j2)

B

4π(3 - j2)

C

-4π(3 + j2)

D

4π(1 - j2)


(c) is the correct answer.

Ques 36 GATE 2014 SET-1

A real (4 × 4) matrix A satisfies the equation A2 = I, where I is the (4 × 4) identity matrix. The positive eigen value of A is _________.


(1) is the correct answer.

Ques 37 GATE 2014 SET-1

Let X1, X2, and X3 be independent and identically distributed random variables with the uniform distribution on [0, 1]. The probability P{X1 is the largest} is ________


(0.33) is the correct answer.

Ques 38 GATE 2014 SET-1

The Taylor series expansion of 3 sin x + 2 cos x is

A

2 + 3x - x2 - (x3)/2 + ...

B

2 - 3x + x2 - (x3)/2 + ...

C

2 + 3x + x2 + (x3)/2 + ...

D

2 - 3x - x2 + (x3)/2 + ...


(a) is the correct answer.

Ques 39 GATE 2014 SET-1

The volume under the surface z(x, y) = x + y and above the triangle in the x-y plane defined by {0 ≤ y ≤ x and 0 ≤ x ≤ 12} is _________.


(864) is the correct answer.

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