Electronics and Communication GATE 2025 Questions with Answer

Ques 27 Electronic Devices and Circuits

The ideal BJT in the circuit given below is biased in the active region with a β of 100.
If I_B is 10 μA, then V_CE (in Volts, rounded off to two decimal places) is

Ques 28 Electronic Devices and Circuits

Which of the following statements is/are TRUE with respect to an ideal opamp?

Ques 29 Electronic Devices and Circuits

Which of the following statements is/are TRUE with respect to ideal MOSFET-based DC-coupled single-stage amplifiers having finite load resistors?

Ques 30 Electronic Devices and Circuits

Which of the following can be used as an n-type dopant for silicon?
Select the correct option(s).

Ques 31 Electronic Devices and Circuits

All the components in the bandpass filter given below are ideal. The lower -3 dB frequency of the filter is 1 MHz.
The upper -3 dB frequency (in MHz, rounded off to the nearest integer) is

Ques 32 Electronic Devices and Circuits

A 4-bit weighted-resistor DAC with inputs b₃, b₂, b₁, and b₀ (MSB to LSB) is designed using an ideal opamp, as shown below. The switches are closed when the corresponding input bits are logic '1' and open otherwise.
When the input b₃b₂b₁b₀ changes from 1110 to 1101, the magnitude of the change in the output voltage V_o (in mV, rounded off to the nearest integer) is

Ques 33 Electronic Devices and Circuits

The identical MOSFETS M₁ and M₂ in the circuit given below are ideal and biased in the saturation region. M₁ and M₂ have a transconductance g_m of 5 ms.
The input signals (in Volts) are: V₁=2.5+0.01 sinωt, V₂=2.5-0.01 sinωt
The output signal V₃ (in Volts) is

Ques 34 Electronic Devices and Circuits

A 10-bit analog-to-digital converter (ADC) has a sampling frequency of 1 MHz and a full scale voltage of 3.3 V.
For an input sinusoidal signal with frequency 500 kHz, the maximum SNR (in dB, rounded off to two decimal places) and the data rate (in Mbps) at the output of the ADC are respectively.

Ques 35 Electronic Devices and Circuits

The intrinsic carrier concentration of a semiconductor is 2.5×10¹⁶/m³ at 300 K.
If the electron and hole mobilities are 0.15 m²/Vs and 0.05 m²/Vs, respectively, then the intrinsic resistivity of the semiconductor (in kΩ.m) at 300 K is
(Charge of an electron e=1.6×10^-19c)

Ques 36 Electronic Devices and Circuits

In the circuit shown, the identical transistors Q1 and Q2 are biased in the active region with β=120. The Zener diode is in the breakdown region with V_Z=5 V and I_Z=25 mA.
If I_L=12 mA and V_EB1=V_EB2=0.7 V, then the values of R₁ and R₂ (in kΩ, rounded off to one decimal place) are respectively.

Ques 37 Electronic Devices and Circuits

The electron mobility μ_n in a non-degenerate germanium semiconductor at 300 K is 0.38 m²/Vs.
The electron diffusivity D_n at 300 K (in cm²/s, rounded off to the nearest integer) is
(Consider the Boltzmann constant k_B=1.38×10^-23 J/K and the charge of an electron e=1.6×10^-19 C.)

Ques 38 Electronic Devices and Circuits

All the diodes in the circuit given below are ideal.
Which of the following plots is/are correct when V_I (in Volts) is swept from -M to M?

A

B

C

D

Ques 39 Electronic Devices and Circuits

The diode in the circuit shown below is ideal. The input voltage (in Volts) is given by V_I=10 sin 100πt, where time t is in seconds.
The time duration (in ms, rounded off to two decimal places) for which the diode is forward biased during one period of the input is