What are the questions asked in GATE 2017 Electrical Engineering Set 1 exam?

Complete set of questions from GATE 2017 EE Set 1 exam covering Power Systems, Electrical Machines, Control Systems, Power Electronics, Analog and Digital Electronics, Signals and Systems, Electromagnetic Theory, Network Theory, Measurements, and more with detailed solutions.

Where can I download GATE 2017 Electrical Engineering Set 1 question paper?

You can download the complete GATE 2017 Electrical Engineering Set 1 question paper with solutions from ExamPrev. The PDF includes all questions with detailed explanations.

How many questions were in GATE 2017 EE Set 1 paper?

GATE 2017 Electrical Engineering Set 1 paper consisted of 65 questions including MCQs, MSQs, and numerical answer type questions covering all major electrical engineering topics.

Are solutions provided for GATE 2017 EE Set 1 questions?

Yes, detailed step-by-step solutions with explanations are provided for all questions from GATE 2017 Electrical Engineering Set 1 paper.

What was the difficulty level of GATE 2017 EE Set 1?

GATE 2017 EE Set 1 had moderate difficulty level with balanced coverage across all topics. The paper tested both conceptual understanding and problem-solving skills in electrical engineering.

Electrical Engineering Gate 2017 Set-1 Questions with Answer

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Ques 14 GATE 2017 Set-1

Consider Here, ⌊t⌋ represents the largest integer less than or equal to and ⌈t⌉ denotes the smallest integer greater than or equal to t. The coefficient of the second harmonic component of the Fourier series representing g(t) is

(mark to all) is the correct answer.

Ques 15 GATE 2017 Set-1

A 4 pole induction machine is working as an induction generator. The generator supply frequency is 60 Hz. The rotor current frequency is 5 Hz. The mechanical speed of the rotor in RPM is

1350

1650

1950

2250

Ques 16 GATE 2017 Set-1

A 3-phase voltage source inverter is supplied from a 600V DC source as shown in the figure below. For a star connected resistive load of 202 per phase, the load power for 120° device conduction, in kW, is

(8.5 to 9.5) is the correct answer.

Ques 17 GATE 2017 Set-1

The matrix has three distinct eigenvalues and one of its eigenvectors is Which one of the following can be another eigenvector of A?

Ques 18 Gate 2017 Set-1

Let z(t) - x(t) * y(t), where "*" denotes convolution. Let c be a positive real-valued constant, Choose the correct expression for z(ct).

c.x(ct) * y(ct)

x(ct) * y(ct)

c.x(t) * y(ct)

c.x(ct) * y(t)

(a) is the correct answer.

Ques 19 GATE 2017 Set-1

The following measurements are obtained on a single phase load: V=220±1%, I=5.0 A±1% and W=555 W±2%. If the power factor is calculated using these measurements, the worst case error in the calculated power factor in percent is ____________ . (Give answer up to one decimal place.)

(4 to 4.1) is the correct answer.

Ques 20 GATE 2017 Set-1

A 3-bus power system is shown in the figure below, where the diagonal elements of Y-bus matrix are: Y₁₁ = –j12 pu, Y₂₂ = –j15 pu, and Y₃₃ = –j7 pu. The per unit values of the line reactances p, q, and r shown in the figure are __________.

p=-0.2 q=-0.1 r=-0.5

p=0.2, q=0.1, r=0.5

p=-5, q=-10 r=-2

p=5, q=10, r=2

(b) is the correct answer.

Ques 21 GATE 2017 Set-1

A 10-bus power system consists of four generator buses indexed as G1, G2, G3, G4 and six load buses indexed as L1, L2, L3, L4, L5, L6. The generator-bus G1 is considered as slack bus, and the load buses L3 and L4 are voltage controlled buses. The generator at bus G2 cannot supply the required reactive power demand, and hence it is operating at its maximum reactive power limit. The number of non-linear equations required for solving the load flow problem using Newton-Raphson method in polar form is ____________.

(14) is the correct answer.

Ques 22 GATE 2017 Set-1

For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?

All the four are majority carrier devices.

All the four are minority carrier devices.

IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.

MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.

(d) is the correct answer.

Ques 23 GATE 2017 Set-1

A closed loop system has the characteristic equation given by s³ + Ks² + (K + 2)s + 3 = 0 For this system to be stable, which one of the following conditions should be satisfied?

0<K<0.5

0.5<K<1

0<K<1

K>1

(d) is the correct answer.

Ques 24 GATE 2017 Set-1

Consider the unity feedback control system shown. The value of K that results in a phase margin of the system to be 30° is ___________. (Give the answer up to two decimal places.)

(1.01 to 1.06) is the correct answer.

Ques 25 GATE 2017 Set-1

A three-phase, 50Hz, star-connected cylindrical-rotor synchronous machine is running as a motor. The machine is operated from a 6.6 kV grid and draws current at unity power factor (UPF). The synchronous reactance of the motor is 30 Ω per phase. The load angle is 30°. The power delivered to the motor in kW is ____________. (Give the answer up to one decimal place).

(835 to 842) is the correct answer.

Ques 26 GATE 2017 Set-1

Consider the system with following input-output relation

where, x[n] is the input and y[n] is the output. The system is

invertible and time invariant

invertible and time varying

non-invertible and time invariant

non-invertible and time varying

(d) is the correct answer.

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