Electrical Engineering > GATE 2020 > Semiconductor Diodes
A non-ideal Si-based pn junction diode is tested by sweeping the bias applied across its terminals from −5 V to +5 V. The effective thermal voltage, VT, for the diode is measured to be (29 ± 2) mV. The resolution of the voltage source in the measurement range is 1 mV.
The percentage uncertainty (rounded off to 2 decimal places) in the measured current at a bias voltage of 0.02 V is _______

Correct : 11.50 to 12.00

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