Electrical Engineering > GATE 2020 > MOSFETs
The cross-section of a metal-oxide-semiconductor structure is shown schematically. Starting from an uncharged condition, a bias of +3 V is applied to the gate contact with respect to the body contact. The charge inside the silicon dioxide layer is then measured to be +Q. The total charge contained within the dashed box shown, upon application of bias, expressed as a multiple of Q (absolute value in Coulombs, rounded off to the nearest integer) is _________.
Correct : 0 to 0
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