EC > GATE 2026 > Diffusion Current
Consider that the concentration of electrons in a semiconductor bar varies linearly from 2 × 1017 cm−3 at x = 1 μm to 1 × 1016 cm−3 at x = 4 μm along the x-direction. Assume that the concentration of electrons is not varying along other directions (that is along y- and z-directions).
[Given: the mobility of electron is 1400 cm2V−1s−1, thermal voltage is 25 mV and electronic charge is 1.6× 10−19 Coulomb.]
The density of electron diffusion current (in A/mm2) is __.
(rounded off to two decimal places)

Correct :

Similar Questions

Mr. X speaks _________ Japanese _________ Chinese.
#3 MCQ
A sum of money is to be distributed among P, Q, R, and S in the proportion 5 : 2 : 4 : 3, respectively. If R gets ₹ 1000 more than S, what is the share of Q (...
#4 MCQ
A trapezium has vertices marked as P, Q, R and S (in that order anticlockwise). The side PQ is parallel to side SR. Further, it is given that, PQ = 11 cm, QR...
#5 MCQ

Related Topics

semiconductor physics electron concentration variation diffusion current calculation GATE EC 2026 electron mobility thermal voltage electronic charge diffusion current density GATE electronics semiconductor physics gate diffusion current formula GATE 2026 EC questions

Unique Visitor Count

Total Unique Visitors

Loading......