EC > GATE 2025 > Diode Characteristics
An ideal p-n junction germanium diode has a reverse saturation current of 10 μA at 300 K.
The voltage (in Volts, rounded off to two decimal places) to be applied across the junction to get a forward bias current of 100 mA at 300 K is
(Consider the Boltzmann constant kB=1.38×10-23 J/K and the charge of an electron e=1.6×10-19 C.)
The voltage (in Volts, rounded off to two decimal places) to be applied across the junction to get a forward bias current of 100 mA at 300 K is
(Consider the Boltzmann constant kB=1.38×10-23 J/K and the charge of an electron e=1.6×10-19 C.)
Correct : 0.23
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