EC > GATE 2025 > Semiconductor Physics
The intrinsic carrier concentration of a semiconductor is 2.5×1016/m3 at 300 K.
If the electron and hole mobilities are 0.15 m2/Vs and 0.05 m2/Vs, respectively, then the intrinsic resistivity of the semiconductor (in kΩ.m) at 300 K is
(Charge of an electron e=1.6×10-19c)
If the electron and hole mobilities are 0.15 m2/Vs and 0.05 m2/Vs, respectively, then the intrinsic resistivity of the semiconductor (in kΩ.m) at 300 K is
(Charge of an electron e=1.6×10-19c)
Correct : a
Similar Questions
For non-degenerately doped n-type silicon, which one of the following plots represents the temperature (T) dependence of free electron concentration (n)?
The free electron concentration profile n(x) in a doped semiconductor at equilibrium is shown in the figure, where the points A, B, and C mark three different p...
A non-degenerate n-type semiconductor has 5% neutral dopant atoms.
Its Fermi level is located at 0.25 eV below the conduction band (EC) and the donor energy le...
Total Unique Visitors
Loading......