EC > GATE 2024 > MOS Capacitor
Consider a MOS capacitor made with p-type silicon.
It has an oxide thickness of 100 nm, a fixed positive oxide charge of 10-8 C/cm2 at the oxide-silicon interface, and a metal work function of 4.6 eV.
Assume that the relative permittivity of the oxide is 4 and the absolute permittivity of free space is 8.85 × 10-14 F/cm.
If the flatband voltage is 0 V, the work function of the p-type silicon (in eV, rounded off to two decimal places) is
It has an oxide thickness of 100 nm, a fixed positive oxide charge of 10-8 C/cm2 at the oxide-silicon interface, and a metal work function of 4.6 eV.
Assume that the relative permittivity of the oxide is 4 and the absolute permittivity of free space is 8.85 × 10-14 F/cm.
If the flatband voltage is 0 V, the work function of the p-type silicon (in eV, rounded off to two decimal places) is
Correct : 4.95
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