EC > GATE 2024 > BJT
Which of the following statements is/are true for a BJT with respect to its DC current gain (β)?
A
Under high-level injection condition in forward active mode, β will decrease with increase in the magnitude of collector current.
B
Under low-level injection condition in forward active mode, where the current at the emitter-base junction is dominated by recombination-generation process, β will decrease with increase in the magnitude of collector current.
C
β will be lower when the BJT is in saturation region compared to when in active region.
D
A higher value of β will lead to a lower value of the collector-to-emitter breakdown voltage.

Correct : A;B;C

Similar Questions

The base of an npn BJT T1 has a linear doping profile NB(x) as shown below. The base of another npn BJT T2 has a uniform doping NB of 10¹⁷ cm⁻³. All other param...
#317 MCQ
The correct circuit representation of the structure shown in the figure is
#358 MCQ
A BJT is biased in forward active mode. Assume VBE = 0.7 V, kT/q = 25 mV and reverse saturation current IS = 10-13 A. The transconductance of the BJT (in mA/V)...
#956 Fill in the Blanks

Related Topics

BJT current gain BJT DC current gain GATE EC 2024 BJT forward active BJT saturation BJT breakdown voltage BJT recombination BJT injection BJT active region BJT breakdown BJT current gain variation

Unique Visitor Count

Total Unique Visitors

Loading......