EC > GATE 2024 > MOSFET Amplifiers
In the circuit shown below, the transistors $M_1$ and $M_2$ are biased in saturation.
Their small signal transconductances are $g_{m1}$ and $g_{m2}$ respectively.
Neglect body effect, channel length modulation and intrinsic device capacitances.
Assuming that capacitor $C_1$ is a short circuit at the signal frequency, the magnitude of small signal voltage gain $|\frac{v_{out}}{v_{in}}|$ is
A
$g_{m2} R_D$
B
$R_D (R_B + \frac{1}{g_{m1}})$
C
$\frac{g_{m2} R_D}{R_B + \frac{1}{g_{m1}}}$
D
$\frac{g_{m1} R_D (\frac{1}{g_{m1}})}{\frac{1}{g_{m1}} + R_s}$

Explanation

Correct : C

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