EC > GATE 2024 > Semiconductor Physics
The free electron concentration profile n(x) in a doped semiconductor at equilibrium is shown in the figure, where the points A, B, and C mark three different positions.
Which of the following statements is/are true?
A
For x between B and C, the electron diffusion current is directed from C to B.
B
For x between B and A, the electron drift current is directed from B to A.
C
For x between B and C, the electric field is directed from B to C.
D
For x between B and A, the electric field is directed from A to B.

Correct : A;D

Similar Questions

For non-degenerately doped n-type silicon, which one of the following plots represents the temperature (T) dependence of free electron concentration (n)?
#43 MCQ
A non-degenerate n-type semiconductor has 5% neutral dopant atoms. Its Fermi level is located at 0.25 eV below the conduction band (EC) and the donor energy le...
#84 Fill in the Blanks
In a semiconductor, if the Fermi energy level lies in the conduction band, then the semiconductor is known as
#101 MCQ

Related Topics

semiconductor doped free electron concentration GATE EC 2024 EC gate electron diffusion current electric field direction GATE semiconductor drift current EC

Unique Visitor Count

Total Unique Visitors

Loading......

Question Options

Contributed by: