EC > GATE 2024 > MOSFET Amplifiers
In the circuit below, assume that the long channel NMOS transistor is biased in saturation.
The small signal trans-conductance of the transistor is $g_{m}$. Neglect body effect, channel length modulation and intrinsic device capacitances.
The small signal input impedance $Z_{in}(j\omega)$ is
A
$\frac{-g_{m}}{C_{1}C_{L}\omega^{2}}+\frac{1}{j\omega C_{1}}+\frac{1}{j\omega C_{L}}$
B
$\frac{g_{m}}{C_{1}C_{L}\omega^{2}}+\frac{1}{j\omega C_{1}}+\frac{1}{j\omega C_{L}}$
C
$\frac{1}{j\omega C_{1}}+\frac{1}{j\omega C_{L}}$
D
$\frac{-g_{m}}{C_{1}C_{L}\omega^{2}}+\frac{1}{j\omega C_{1}+j\omega C_{L}}$

Explanation

Correct : A

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