EC > GATE 2023 > Semiconductor Physics
In a semiconductor device, the Fermi-energy level is 0.35 eV above the valence band energy. The effective density of states in the valence band at T = 300 K is 1 × 1019 cm-3. The thermal equilibrium hole concentration in silicon at 400 K is ____ × 1013 cm-3 (rounded off to two decimal places).
Given kT at 300 K is 0.026 eV.
Given kT at 300 K is 0.026 eV.
Correct : 4.63
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