EC > GATE 2023 > Semiconductor Physics
In an extrinsic semiconductor, the hole concentration is given to be 1.5ni where ni is the intrinsic carrier concentration of 1 ร— 1010 cm-3. The ratio of electron to hole mobility for equal hole and electron drift current is given as ____ (rounded off to two decimal places).

Correct : 0.67

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Related Topics

semiconductor extrinsic hole concentration extrinsic GATE EC 2023 electron mobility EC hole mobility EC EC gate intrinsic carrier concentration GATE 2023 EC drift current ratio

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