A p-type semiconductor with zero electric field is under illumination (low level injection) in steady state condition. Excess minority carrier density is zero at x = ±2l_n, where l_n = 10⁻⁴ cm is the diffusion length of electrons. Assume electronic charge, q = −1.6 × 10⁻¹⁹ C. The profiles of photo-generation rate of carriers and the recombination rate of excess minority carriers (R) are shown. Under these conditions, the magnitude of the current density due to the photo-generated electrons at x = +2l_n is _________ mA/cm² (rounded off to two decimal places).