EC > GATE 2022 > MOS Capacitor
An ideal MOS capacitor (p-type semiconductor) is shown in the figure. The MOS capacitor is under strong inversion with VG = 2 V. The corresponding inversion charge density (QIN) is 2.2 μC/cm2. Assume oxide capacitance per unit area as COX = 1.7 μF/cm2. For VG = 4 V, the value of QIN is ______ μC/cm2 (rounded off to one decimal place).
Correct : 5.6
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