In a non-degenerate bulk semiconductor with electron density n = 10¹⁶ cm⁻³, the value of E_C − E_Fn = 200 meV, where E_C and E_Fn denote the bottom of the conduction band energy and electron Fermi level energy, respectively. Assume thermal voltage as 26 meV and the intrinsic carrier concentration is 10¹⁰ cm⁻³. For n = 0.5 × 10¹⁶ cm⁻³, the closest approximation of the value of (E_C − E_Fn), among the given options, is ________.