EC > GATE 2020 > BJT
The base of an npn BJT T1 has a linear doping profile NB(x) as shown below. The base of another npn BJT T2 has a uniform doping NB of 10¹⁷ cm⁻³. All other parameters are identical for both the devices. Assuming that the hole density profile is the same as that of doping, the common-emitter current gain of T2 is
A
approximately 2.0 times that of T1.
B
approximately 0.3 times that of T1.
C
approximately 2.5 times that of T1.
D
approximately 0.7 times that of T1.

Correct : mta

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BJT current gain npn BJT T1 npn BJT T2 uniform doping linear doping profile hole density profile GATE EC 2020 BJT current gain comparison BJT doping profile GATE electronics BJT current gain calculation

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