The band diagram of a p-type semiconductor with a band-gap of 1 eV is shown. Using this semiconductor, a MOS capacitor having VTH of -0.16 V, Cox' of 100 nF/cm² and a metal work function of 3.87 eV is fabricated. There is no charge within the oxide. If the voltage across the capacitor is VTH, the magnitude of depletion charge per unit area (in C/cm²) is