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Consider a long-channel MOSFET with a channel length 1 μm and width 10μm. The device parameters are acceptor concentration NA=5×1016 cm-3, electron mobility μn=800 cm2/V-s, oxide capacitance/area Cox=3.45×10-7 F/cm2, threshold voltage VT=0.7 V. The drain saturation current (IDsat) for a gate voltage of 5 V is... mA (rounded off to two decimal places). [ε0=8.854×10-14 F/cm, εSi=11.9]
Correct : 25.5
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