In the circuit shown, the threshold voltages of the PMOS (|V_tp|) and nMOS (V_tn) transistors are both equal to 1 V. All the transistors have the same output resistance r_ds of 6 MΩ. The other parameters are listed below: μ_nC_ox=60 μA/V²; (w/L)_nMOS=5 and μ_pC_ox=30 μA/V²; (w/L)_PMOS=10. μ_n and μ_p are the carrier mobilities, and C_ox is the oxide capacitance per unit area. Ignoring the effect of channel length modulation and body bias, the gain of the circuit is... (rounded off to 1 decimal place).