A Germanium sample of dimensions 1 cm × 1 cm is illuminated with a 20 mW, 600 nm laser light source as shown in the figure. The illuminated sample surface has a 100 nm of loss-less Silicon dioxide layer that reflects one-fourth of the incident light. From the remaining light, one-third of the power is reflected from the Silicon dioxide-Germanium interface, one-third is absorbed in the Germanium layer, and one-third is transmitted through the other side of the sample. If the absorption coefficient of Germanium at 600 nm is 3×10⁴ cm^-1 and the bandgap is 0.66 eV, the thickness of the Germanium layer, rounded off to 3 decimal places, is... μm.