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A junction is made between p- Si with doping density NA1=1015cm-3 and p Si with doping density NA2=1017cm-3. Given: Boltzmann constant k=1.38 x 10-23 J·K-1, electronic charge q=1.6×10-19 C. Assume 100% acceptor ionization. At room temperature (T=300K), the magnitude of the built-in potential (in volts, correct to two decimal places) across this junction will be
Correct : 0.12
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As shown, two Silicon (Si) abrupt p-n junction diodes are fabricated with uniform donor doping concentrations of ND1=1014cm-3 and ND2=1016cm-3 in the n-regions...
As shown, two Silicon (Si) abrupt p-n junction diodes are fabricated with uniform donor doping concentrations of ND1=1014cm-3 and ND2=1016cm-3 in the n-regions...
As shown, two Silicon (Si) abrupt p-n junction diodes are fabricated with uniform donor doping concentrations of ND1=1014cm-3 and ND2=1016cm-3 in the n-regions...
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