EC > GATE 2017 SET-2 > MOSFET Characteristics
An n-channel enhancement mode MOSFET is biased at VGS>VTH and VDS>(VGS-VTH). where VGS is the gate-to-source voltage, VDS is the drain-to-source voltage and VTH is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves as a
Correct : c
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