EC > GATE 2017 SET-2 > MOSFET Characteristics
Two n-channel MOSFETs. T1 and T2, are identical in all respects except that the width of T2 is double that of T1. Both the transistors are biased in the saturation region of operation, but the gate overdrive voltage (VGS-VTH) of T2 is double that of T1. where VGS and VTH are the gate-to-source voltage and threshold voltage of the transistors, respectively. If the drain current and transconductance of T1 are ID1 and gm1 respectively, the corresponding values of these two parameters for T2 are
A
8ID1 and 2gm1
B
8ID1 and 4gm1
C
4ID1 and 4gm1
D
4ID1 and 2gm1

Correct : b

Similar Questions

Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET):P: As channel length reduces, OFF-state current increases.Q:...
#621 MCQ
Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET):P: As channel length reduces, OFF-state current increases.Q:...
#621 MCQ
Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET):P: As channel length reduces, OFF-state current increases.Q:...
#621 MCQ

Related Topics

No tags found

Unique Visitor Count

Total Unique Visitors

Loading......