EC > GATE 2017 SET-2 > MOS Capacitor
A MOS capacitor is fabricated on p-type Si (Silicon) where the metal work function is 4.1 eV and electron affinity of Si is 4.0 eV. EC-EF=0.9 eV, where EC and EF are the conduction band minimum and the Fermi energy levels of Si, respectively. Oxide εr=3.9. εo=8.85×10-14F/cm, oxide thickness tox=0.1 μm and electronic charge q=1.6×10-19 C. If the measured flat band voltage of this capacitor is -1 V. then the magnitude of the fixed charge at the oxide-semiconductor interface, in nC/cm2 is
Correct : 6.9
Similar Questions
Consider a MOS capacitor made with p-type silicon.
It has an oxide thickness of 100 nm, a fixed positive oxide charge of 10-8 C/cm2 at the oxide-silicon interf...
For a MOS capacitor, Vfb and Vt are the flat-band voltage and the threshold voltage, respectively. The variation of the depletion width (Wdep) for varying gate...
An ideal MOS capacitor (p-type semiconductor) is shown in the figure. The MOS capacitor is under strong inversion with VG = 2 V. The corresponding inversion cha...
Total Unique Visitors
Loading......