EC > GATE 2017 SET-2 > MOSFET Characteristics
Consider an n-channel MOSFET having width W. length L. electron mobility in the channel μn and oxide capacitance per unit area Cox. If gate-to-source voltage VGS=0.7 V, drain-to-source voltage VDS=0.1 V, (μnCox)=100 μA/V2, threshold voltage VTH=0.3 V and (W/L)=50, then the transconductance gm (in mA/V) is
Correct : 0.5
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