EC > GATE 2017 SET-1 > MOSFET DC Analysis
For the circuit shown, assume that the NMOS transistor is in saturation. Its threshold voltage Vtn=1 V and its transconductance parameter μnCox(W/L)=1 mA/V2.
Neglect channel length modulation and body bias effects. Under these conditions, the drain current ID in mA is

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