EC > GATE 2017 SET-1 > Semiconductor Physics
As shown, a uniformly doped Silicon (Si) bar of length L=0.1μm with a donor concentration ND=1016cm-3 is illuminated at x=0 such that electron and hole pairs are generated at the rate of GL=GL0(1-x/L), 0≤x≤L where GL0=1017cm-3s-1. Hole lifetime is 10-4 s, electronic charge q=1.6×10-19 C. hole diffusion coefficient Dp=100 cm2/s and low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x=L the magnitude of the diffusion current density at x=L/2 in A/cm2 is
Correct : 16
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