EC > GATE 2017 SET-1 > Semiconductor Physics
The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of n=1×1016cm-3 and electronic charge q=1.6×10-19 C.
If a bias of 5 V is applied across a 1μm region of this semiconductor. the resulting current density in this region, in kA/cm2, is
Correct : 1.6
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