EC > GATE 2017 SET-1 > Semiconductor Diodes
An n+-n Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of ND1=1×1018cm-3 and ND2=1×1015cm-3 corresponding to the n+ and n regions respectively. At the operational temperature T. assume complete impurity ionization, kT/q=25 mV, and intrinsic carrier concentration to be ni=1×1010cm-3 What is the magnitude of the built-in potential of this device?
Correct : d
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