EC > GATE 2016 SET-2 > MOSFET Characteristics
Consider a long-channel NMOS transistor with source and body connected together. Assume that the electron mobility is independent of VGS and VDS. Given, gm=0.5 μA/V for VDS=50 mV and VGS=2 V and gd=8 μA/V for VGS=2 V and VDS=0 V, where gm=∂ID/∂vGS and gd=∂ID/∂vDS. The threshold voltage (in volts) of the transistor is ___________.
Correct : 1.2
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