GATE EC 2016 Q45 Solved: MOS Capacitor Inversion Carrier Density

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EC > GATE 2016 SET-2 > MOSFET Characteristics

A voltage V_G is applied across a MOS capacitor with metal gate and p-type silicon substrate at T=300 K. The inversion carrier density (in number of carriers per unit area) for V_G=0.8 V is 2×10¹¹cm^-2. For V_G=1.3 V the inversion carrier density is 4×10¹¹cm^-2. What is the value of the inversion carrier density for V_G=1.8 V?

A

4.5×10¹¹cm^-2

B

6.0×10¹¹cm^-2

C

7.2×10¹¹cm^-2

D

8.4×10¹¹cm^-2

Correct : b

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