Consider a silicon sample at T=300 K with a uniform donor density N_d=5×10¹⁶cm^-3, illuminated uniformly such that the optical generation rate is G_opt=1.5×10²⁰cm^-3s^-1 throughout the sample. The incident radiation is turned off at t=0. Assume low-level injection to be valid and ignore surface effects. The carrier lifetimes are τ_p0=0.1 μs and τ_n0=0.5 μs. The hole concentration at t=0 and the hole concentration at t=0.3 μs, respectively, are