EC > GATE 2016 SET-1 > MOSFET Characteristics
Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that μNCox(W/L)=4, the threshold voltage is 0.3V, and the channel length modulation parameter is 0.09 V-1. In the saturation region, the drain conductance (in micro seimens) is
Explanation
Correct : 28.35
Similar Questions
What is the worst-case time complexity of insertion in an AVL tree?
Which operations on a binary search tree have O(h) complexity?
Compare search complexities of sorted array vs balanced BST.