EC > GATE 2016 SET-1 > MOSFET Characteristics
Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that μNCox(W/L)=4, the threshold voltage is 0.3V, and the channel length modulation parameter is 0.09 V-1. In the saturation region, the drain conductance (in micro seimens) is
Correct : 28.35
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