EC > GATE 2016 SET-1 > PN Junction Diode
Consider a silicon p-n junction with a uniform acceptor doping concentration of 1017cm-3 on the p-side and a uniform donor doping concentration of 1016cm-3 on the n-side. No external voltage is applied to the diode. Given: kT/q=26mV, ni=1.5×1010cm-3, εSi=12ε0, ε0=8.85×10-14F/m and q=1.6×10-19C. The charge per unit junction area (nC cm-2) in the depletion region on the p-side is
Correct : -4.8
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