EC > GATE 2015 SET-3 > VLSI Technology
Which one of the following processes is preferred to form the gate dielectric (SiO2) of MOSFETs?
A
Sputtering
B
Molecular beam epitaxy
C
Wet oxidation
D
Dry oxidation

Correct : d

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Related Topics

gate dielectric formation MOSFET gate dielectric EC GATE 2015 gate dielectric processes sputtering molecular beam epitaxy dry oxidation wet oxidation semiconductor gate dielectric

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