EC > GATE 2015 SET-1 > Electronic Devices
For a silicon diode with long P and N regions, the acceptor and donor impurity concentrations are 1 × 1017 cm−3 and 1 × 1015 cm−3, respectively. The lifetimes of electrons in the P region and holes in the N region are both 100 μs. The electron and hole diffusion coefficients are 49 cm2/s and 36 cm2/s, respectively. Assume kT/q = 26 mV, the intrinsic carrier concentration is 1 × 1010 cm−3, and q = 1.6 × 10−19 C. When a forward voltage of 208 mV is applied across the diode, the hole current density (in nA/cm2) injected from P region to N region is
Correct : 28 to 30
Similar Questions
A silicon sample is uniformly doped with donor type impurities with a concentration of 1016 cm−3. The electron and hole mobilities in the sample are 1200...
In the circuit shown, I1 = 80 mA and I2 = 4 mA. Transistors T1 and T2 are identical. Assume that the thermal voltage VT is 26 mV at 27°C. At 50°C, the v...
For the NMOSFET in the circuit shown, the threshold voltage is Vth, where Vth > 0. The source voltage VSS is varied from 0 to VDD. Neglecting the channel len...
Total Unique Visitors
Loading......