EC > GATE 2015 SET-1 > Electronic Devices
For the NMOSFET in the circuit shown, the threshold voltage is Vth, where Vth > 0. The source voltage VSS is varied from 0 to VDD. Neglecting the channel length modulation, the drain current ID as a function of VSS is represented by


Correct : b
Similar Questions
A silicon sample is uniformly doped with donor type impurities with a concentration of 1016 cm−3. The electron and hole mobilities in the sample are 1200...
In the circuit shown, I1 = 80 mA and I2 = 4 mA. Transistors T1 and T2 are identical. Assume that the thermal voltage VT is 26 mV at 27°C. At 50°C, the v...
A MOSFET in saturation has a drain current of 1 mA for VDS = 0.5 V. If the channel length modulation coefficient is 0.05 V−1, the output resistance (in k&...
Total Unique Visitors
Loading......



