EC > GATE 2015 SET-1 > Electronic Devices
A silicon sample is uniformly doped with donor type impurities with a concentration of 1016 cm−3. The electron and hole mobilities in the sample are 1200 cm2/V-s and 400 cm2/V-s respectively. Assume complete ionization of impurities. The charge of an electron is 1.6 × 10−19 C. The resistivity of the sample (in Ω-cm) is
Correct : 0.50 to 0.54
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