Consider two BJTs biased at the same collector current with area A₁ = 0.2 μm × 0.2 μm and A₂ = 300 μm × 300 μm. Assuming that all other device parameters are identical, kT/q = 26 mV, the intrinsic carrier concentration is 1 × 10¹⁰ cm⁻³, and q = 1.6 × 10⁻¹⁹ C, the difference between the base-emitter voltages (in mV) of the two BJTs (i.e., V_BE1 – V_BE2) is _____.