GATE EC 2014: Silicon Doping & Electron Concentration | Examprev

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EC > GATE 2014 SET-4 > Semiconductor Physics

Consider a silicon sample doped with N_D = 1×10¹⁵/cm³ donor atoms. Assume that the intrinsic carrier concentration n_i = 1.5×10¹⁰/cm³. If the sample is additionally doped with N_A = 1×10¹⁸/cm³ acceptor atoms, the approximate number of electrons/cm³ in the sample, at T=300 K, will be ______.

Correct : 225

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