EC > GATE 2014 SET-4 > Semiconductor Physics
Consider a silicon sample doped with ND = 1×1015/cm3 donor atoms. Assume that the intrinsic carrier concentration ni = 1.5×1010/cm3. If the sample is additionally doped with NA = 1×1018/cm3 acceptor atoms, the approximate number of electrons/cm3 in the sample, at T=300 K, will be ______.
Correct : 225
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