EC > GATE 2014 SET-4 > Semiconductor Physics
In the figure, ln(ρi) is plotted as a function of 1/T, where ρi is the intrinsic resistivity of silicon, T is the temperature, and the plot is almost linear.
The slope of the line can be used to estimate
A
band gap energy of silicon (Eg)
B
sum of electron and hole mobility in silicon (μn + μp)
C
reciprocal of the sum of electron and hole mobility in silicon (μn + μp)−1
D
intrinsic carrier concentration of silicon (ni)

Correct : a

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Related Topics

EC GATE 2014 band gap energy silicon GATE EC intrinsic resistivity silicon mobility silicon GATE 2014 EC temperature effect on resistivity intrinsic carrier concentration

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