EC > GATE 2014 SET-4 > Semiconductor Physics
At T = 300 K, the band gap and the intrinsic carrier concentration of GaAs are 1.42 eV and 106 cm−3, respectively. In order to generate electron hole pairs in GaAs, which one of the wavelength (λC) ranges of incident radiation, is most suitable? (Given that: Plank's constant is 6.62 × 10−34 J-s, velocity of light is 3 × 1010 cm/s and charge of electron is 1.6 × 10−19 C)
Correct : a
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