At T = 300 K, the band gap and the intrinsic carrier concentration of GaAs are 1.42 eV and 10⁶ cm⁻³, respectively. In order to generate electron hole pairs in GaAs, which one of the wavelength (λ_C) ranges of incident radiation, is most suitable? (Given that: Plank's constant is 6.62 × 10⁻³⁴ J-s, velocity of light is 3 × 10¹⁰ cm/s and charge of electron is 1.6 × 10⁻¹⁹ C)