EC > GATE 2014 SET-3 > MOS Capacitor
An ideal MOS capacitor has boron doping-concentration of 1015 cm−3 in the substrate. When a gate voltage is applied, a depletion region of width 0.5 μm is formed with a surface (channel) potential of 0.2 V. Given that ε0 = 8.854 × 10−14 F/cm and the relative permittivities of silicon and silicon dioxide are 12 and 4, respectively, the peak electric field (in V/μm) in the oxide region is _____________.
Correct : 2.4
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